LPCVD SiO2 Layers Prepared from SiH4 and O2 at 450 °C in a Rapid Thermal Processing Reactor

In this paper experimental results of the silnne oxidation kinetics in a rapid thermal low pressure chemical vapor deposition (RTLPCVD) cold wall reactor at 450 OC are presented. For a certain total pressure kept constant in the range of 0.6-4.5 mbar. it is always found a certain threshold silane partial pressure p(th)siH4 (decreasing from 0.15 mbar to 0.076 n~bnr whcn the total pressure increases) which determines a sharp transition from no film formation to high deposition rates of the Si02 layers. Critical partial pressures for lower limits of explosion at room temperature (0.223 mbar) and at deposition temperature (0.17 mbar) are noticed. The film deposition is vely sensitive to the changes in the chemical state of the \valls. These results may indicate that the silane oxidation process is controlled by the gas phase chain reactions. By keeping constant the total pressure (4.5 mbar). the SiH4 partial pressure (0.079 mbar) and the total gas flow rate (570 sccm). with the nitrogen varied as a gas balance. an increase-maximum-decrease dependence of deposition rate as a function of 02/SiH4 mole ratio is found. Uniform SiO2 layers ( 5% around the averaged value) were found for the above CVD conditions and an 02/SiH4 ratio equal to 11. Without further process and equipment improvements this process cannot be used in practice.